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| SMD Schottky Barrier Diode RB751G40-G (RoHS Device) Reverse Voltage: 30 Volts Forward Current: 30 mA Features: Small Surface Mounting Type High Reliability Low Reverse Current and Low Forward Voltage E1 L c E2 E b D + - SOD-723 Mechanical Data: Case: Molded plastic SOD-723 Terminals: Solderable per MIL-STD-750, Method 2026.1. Polarity: Indicated by cathode band. Mounting position: Any. Marking: F Symbol A A1 b c D E E1 E2 L Inches Min. Max. 0.021 0.026 0.020 0.023 0.010 0.014 0.003 0.006 0.022 0.026 0.035 0.043 0.051 0.059 0.008 REF 0.003 0.001 7 REF A1 A Millimeters Min. Max. 0.525 0.650 0.515 0.580 0.250 0.350 0.080 0.150 0.550 0.650 1.100 0.900 1.500 1.300 0.200 REF 0.010 0.070 7 REF Maximum Ratings (at TA=25C unless otherwise specified) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 40 30 30 200 125 -40~+125 Unit V V mA mA C C Electrical Ratings (at TA=25C unless otherwise specified) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR CT 2 Min. Typ. Max. 0.37 0.5 Unit V A pF Conditions IF=1mA VR=30V VR=1V, f=1MHz "-G" suffix designated RoHS compliant version Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page1 SMD Schottky Barrier Diode RB751G40-G (RoHS Device) Electrical Characteristic Curves Fig. 1 Forward Characteristics 1000m 100m 10m 1m 100 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 125C 75C 25C -25C Fig. 2 Reverse Characteristics 100 10 1 125C Reverse Current (A) Forward Current (A) 75C 25C 100n 10n 1n 0 5 10 15 20 25 30 35 -25C Forward Voltage (V) Reverse Voltage (V) Fig. 3 Capacitiance between Terminals Capacitance between Terminals (pF) 100 50 20 SOD-723 PAD-SIZE 0.6 mm. 10 5 2 1 0 2 4 6 8 10 12 14 0.7mm. Reverse Voltage (V) 1.2mm. "-G" suffix designated RoHS compliant version Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page2 |
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